N0412N-S19-AY

N0412N-S19-AY - Renesas Electronics America

Part Number
N0412N-S19-AY
Manufacturer
Renesas Electronics America
Brief Description
MOSFET N-CH 40V 100A TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
N0412N-S19-AY PDF online browsing
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Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
16853 pcs
Reference Price
USD 1.6/pcs
Our Price
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N0412N-S19-AY Detailed Description

Part Number N0412N-S19-AY
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 100A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 5550pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 1.5W (Ta), 119W (Tc)
Rds On (Max) @ Id, Vgs 3.7 mOhm @ 50A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Weight -
Country of Origin -

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