N0412N-S19-AY Detailed Description
Part Number |
N0412N-S19-AY |
Part Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
40V |
Current - Continuous Drain (Id) @ 25°C |
100A (Ta) |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs(th) (Max) @ Id |
- |
Gate Charge (Qg) (Max) @ Vgs |
100nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
5550pF @ 25V |
Vgs (Max) |
±20V |
FET Feature |
- |
Power Dissipation (Max) |
1.5W (Ta), 119W (Tc) |
Rds On (Max) @ Id, Vgs |
3.7 mOhm @ 50A, 10V |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-220 |
Package / Case |
TO-220-3 |
Weight |
- |
Country of Origin |
- |
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