HAT2299WP-EL-E

HAT2299WP-EL-E - Renesas Electronics America

Part Number
HAT2299WP-EL-E
Manufacturer
Renesas Electronics America
Brief Description
MOSFET N-CH WPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
HAT2299WP-EL-E PDF online browsing
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Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
4000 pcs
Reference Price
USD 0/pcs
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HAT2299WP-EL-E Detailed Description

Part Number HAT2299WP-EL-E
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 14A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 25W (Tc)
Rds On (Max) @ Id, Vgs 110 mOhm @ 7A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-WPAK
Package / Case 8-PowerWDFN
Weight -
Country of Origin -

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