NSV60601MZ4T1G - ON Semiconductor

Part Number	NSV60601MZ4T1G
Part Status	Active
Transistor Type	NPN
Current - Collector (Ic) (Max)	6A
Voltage - Collector Emitter Breakdown (Max)	60V
Vce Saturation (Max) @ Ib, Ic	300mV @ 600mA, 6A
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1A, 2V
Power - Max	800mW
Frequency - Transition	100MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Supplier Device Package	SOT-223
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
NSV60100DMTWTBG	ON Semiconductor	DUAL TRANSISTOR PNP	Details
NSV60100DUW6T1G	ON Semiconductor	DUAL TRANSISTOR PNP	Details
NSV60101DMR6T1G	ON Semiconductor	60V 1A DUAL NPN LOW VCE	Details
NSV60101DMTWTBG	ON Semiconductor	TRANS NPN DUAL 60V 1A 6WDFN	Details
NSV60200LT1G	ON Semiconductor	TRANS PNP 60V 2A SOT23-3	Details
NSV60201LT1G	ON Semiconductor	TRANS NPN 60V 2A SOT23-3	Details
NSV60600MZ4T1G	ON Semiconductor	TRANS PNP 60V 6A SOT223-4	Details
NSV60600MZ4T3G	ON Semiconductor	TRANS PNP 60V 6A SOT223-4	Details
NSV60601MZ4T1G	ON Semiconductor	TRANS NPN 60V 6A SOT-223-4	Details
NSV60601MZ4T3G	ON Semiconductor	TRANS NPN 60V 6A SOT-223-4	Details