MSD2714AT1G - ON Semiconductor

Part Number	MSD2714AT1G
Part Status	Obsolete
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	25V
Frequency - Transition	650MHz
Noise Figure (dB Typ @ f)	-
Gain	-
Power - Max	225mW
DC Current Gain (hFE) (Min) @ Ic, Vce	90 @ 1mA, 6V
Current - Collector (Ic) (Max)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SC-59
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
MSD200-08	Microsemi Corporation	DIODE BRIDGE 3PH 800V 200A SM3	Details
MSD200-12	Microsemi Corporation	DIODE BRIDGE 3PH 1200V 200A SM3	Details
MSD200-16	Microsemi Corporation	DIODE BRIDGE 1600V 200A SM3	Details
MSD200-18	SMSC	MSD200-18 SMSC Standa.. New Original Stocks	Details
MSD229EL-LF	MSTAR	MSD229EL-LF MSTAR LQFP25.. New Original Stocks	Details
MSD2714AT1	ON	MSD2714AT1 ON SOT23 New Original Stocks	Details
MSD2714AT1G	ON Semiconductor	TRANS NPN VHF/UHF BIPO 25V SC-59	Details
MSD286QQ-LF-Z1-SJ	MSTAR	MSD286QQ-LF-Z1-SJ MSTAR PQFP29.. New Original Stocks	Details
MSD289FG-LF-Z1	ORIGINAL	MSD289FG-LF-Z1 ORIGINAL BGA New Original Stocks	Details