MMBF0201NLT1G - ON Semiconductor

Part Number	MMBF0201NLT1G
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	300mA (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	45pF @ 5V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	225mW (Ta)
Rds On (Max) @ Id, Vgs	1 Ohm @ 300mA, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
MMBF0201NLT1	ON Semiconductor	MOSFET N-CH 20V 300MA SOT-23	Details
MMBF0201NLT1G	ON Semiconductor	MOSFET N-CH 20V 300MA SOT-23	Details
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