FQD9N25TM-F085 - ON Semiconductor

Part Number	FQD9N25TM-F085
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25°C	7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	420 mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	700pF @ 25V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 55W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D-Pak
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
FQD9N08	FAIRC	FQD9N08 FAIRC TO-252.. New Original Stocks	Details
FQD9N08TM	Fairchild/ON Semiconductor	MOSFET N-CH 80V 7.4A DPAK	Details
FQD9N25	FAIRC	FQD9N25 FAIRC TO-252.. New Original Stocks	Details
FQD9N25TF	Fairchild/ON Semiconductor	MOSFET N-CH 250V 7.4A DPAK	Details
FQD9N25TM	Fairchild/ON Semiconductor	MOSFET N-CH 250V 7.4A DPAK	Details
FQD9N25TM-F080	ON Semiconductor	MOSFET N-CH 250V 7.4A DPAK	Details
FQD9N25TM-F085	ON Semiconductor	MOSFET N-CH 250V 7.4A DPAK	Details
FQD9N25TM_F080	Fairchild/ON Semiconductor	MOSFET N-CH 250V 7.4A DPAK	Details
FQD9N25TM_F085	Fairchild/ON Semiconductor	MOSFET N-CH 250V 7.4A DPAK	Details