ECH8315-TL-H - ON Semiconductor

Part Number	ECH8315-TL-H
Part Status	Not For New Designs
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	7.5A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4V, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	875pF @ 10V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	1.5W (Ta)
Rds On (Max) @ Id, Vgs	25 mOhm @ 3.5A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-ECH
Package / Case	8-SMD, Flat Lead
Weight	-
Country of Origin	-

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