PMWD19UN,518

PMWD19UN,518 - NXP USA Inc.

Part Number
PMWD19UN,518
Manufacturer
NXP USA Inc.
Brief Description
MOSFET 2N-CH 30V 5.6A 8TSSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
PMWD19UN,518 PDF online browsing
Datasheet PDF Download
PMWD19UN,518.pdf
Category
Transistors - FETs, MOSFETs - Arrays
Delivery Time
1 Day
Date Code
New
Stock Quantity
3985 pcs
Reference Price
USD 0/pcs
Our Price
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PMWD19UN,518 Detailed Description

Part Number PMWD19UN,518
Part Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 5.6A
Rds On (Max) @ Id, Vgs 23 mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs 28nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 1478pF @ 10V
Power - Max 2.3W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package 8-TSSOP
Weight -
Country of Origin -

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