| Part Number | PMT200EN,115 |
|---|---|
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 475pF @ 80V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 8.3W (Tc) |
| Rds On (Max) @ Id, Vgs | 235 mOhm @ 1.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223 |
| Package / Case | TO-261-4, TO-261AA |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
PMT200EN,115 | NXP USA Inc. | MOSFET N-CH 100V 1.8A SC-73 | Details |
|
PMT200EN,135 | NXP USA Inc. | MOSFET N-CH 100V 1.8A SC-73 | Details |
|
PMT200EPEAX | Nexperia USA Inc. | MOSFET P-CHANNEL 70V 2.4A SC73 | Details |
 |
PMT200EPEX | Nexperia USA Inc. | PMT200EPE/SOT223/SC-73 | Details |
 |
PMT20G | Carlo Gavazzi Inc. | SENSOR THROUGH-BEAM 20M | Details |
 |
PMT20I | Carlo Gavazzi Inc. | SENSOR THROUGH-BEAM 20M RELAY | Details |
|
PMT20IM | Carlo Gavazzi Inc. | SENSOR THROUGH-BEAM 20M MUTE | Details |
|
PMT20RG | Carlo Gavazzi Inc. | SENSOR THROUGH-BEAM 20M | Details |
|
PMT20RGT | Carlo Gavazzi Inc. | SENSOR THROUGH-BEAM 20M | Details |
|
PMT20RI | Carlo Gavazzi Inc. | SENSOR THROUGH-BEAM 20M RELAY | Details |
