PDTB113ES,126 - NXP USA Inc.

Part Number	PDTB113ES,126
Part Status	Obsolete
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	500mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	1k
Resistor - Emitter Base (R2) (Ohms)	1k
DC Current Gain (hFE) (Min) @ Ic, Vce	33 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	-
Power - Max	500mW
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package	TO-92-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
PDTB113EK,115	NXP USA Inc.	TRANS PREBIAS PNP 250MW SMT3	Details
PDTB113EQAZ	Nexperia USA Inc.	TRANS PREBIAS PNP 3DFN	Details
PDTB113ES,126	NXP USA Inc.	TRANS PREBIAS PNP 500MW TO92-3	Details
PDTB113ET,215	Nexperia USA Inc.	TRANS PREBIAS PNP 250MW TO236AB	Details
PDTB113EUF	Nexperia USA Inc.	TRANS PREBIAS PNP 0.425W	Details
PDTB113EUX	Nexperia USA Inc.	TRANS PREBIAS PNP 0.425W	Details
PDTB113ZK,115	NXP USA Inc.	TRANS PREBIAS PNP 250MW SMT3	Details
PDTB113ZQAZ	Nexperia USA Inc.	TRANS PREBIAS PNP 3DFN	Details
PDTB113ZS,126	NXP USA Inc.	TRANS PREBIAS PNP 500MW TO92-3	Details
PDTB113ZT	NXP	PDTB113ZT NXP SMD or Through Hole New Original Stocks	Details