PBRN123EK,115 - NXP USA Inc.

Part Number	PBRN123EK,115
Part Status	Obsolete
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	600mA
Voltage - Collector Emitter Breakdown (Max)	40V
Resistor - Base (R1) (Ohms)	2.2k
Resistor - Emitter Base (R2) (Ohms)	2.2k
DC Current Gain (hFE) (Min) @ Ic, Vce	280 @ 300mA, 5V
Vce Saturation (Max) @ Ib, Ic	1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	-
Power - Max	250mW
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SMT3; MPAK
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
PBRN113EK,115	NXP USA Inc.	TRANS PREBIAS NPN 250MW SMT3	Details
PBRN113ES,126	NXP USA Inc.	TRANS PREBIAS NPN 0.7W TO92-3	Details
PBRN113ET,215	Nexperia USA Inc.	TRANS PREBIAS NPN 250MW TO236AB	Details
PBRN113ZK,115	NXP USA Inc.	TRANS PREBIAS NPN 250MW SMT3	Details
PBRN113ZS,126	NXP USA Inc.	TRANS PREBIAS NPN 0.7W TO92-3	Details
PBRN113ZT,215	Nexperia USA Inc.	TRANS PREBIAS NPN 250MW TO236AB	Details
PBRN123EK,115	NXP USA Inc.	TRANS PREBIAS NPN 250MW SMT3	Details
PBRN123ES,126	NXP USA Inc.	TRANS PREBIAS NPN 0.7W TO92-3	Details
PBRN123ET,215	Nexperia USA Inc.	TRANS PREBIAS NPN 250MW TO236AB	Details
PBRN123YK,115	NXP USA Inc.	TRANS PREBIAS NPN 250MW SMT3	Details