PSMN8R5-100ESFQ Detailed Description
Part Number |
PSMN8R5-100ESFQ |
Part Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
100V |
Current - Continuous Drain (Id) @ 25°C |
97A (Ta) |
Drive Voltage (Max Rds On,Min Rds On) |
7V, 10V |
Vgs(th) (Max) @ Id |
4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
44.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
3181pF @ 50V |
Vgs (Max) |
±20V |
FET Feature |
- |
Power Dissipation (Max) |
183W (Ta) |
Rds On (Max) @ Id, Vgs |
8.8 mOhm @ 25A, 10V |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
I2PAK |
Package / Case |
TO-220-3, Short Tab |
Weight |
- |
Country of Origin |
- |
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