PSMN6R3-120ESQ

PSMN6R3-120ESQ - Nexperia USA Inc.

Part Number
PSMN6R3-120ESQ
Manufacturer
Nexperia USA Inc.
Brief Description
MOSFET N-CH 120V 70A I2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
PSMN6R3-120ESQ PDF online browsing
Datasheet PDF Download
PSMN6R3-120ESQ.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
1200 pcs
Reference Price
USD 2.65/pcs
Our Price
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PSMN6R3-120ESQ Detailed Description

Part Number PSMN6R3-120ESQ
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 207.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 11384pF @ 60V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 405W (Tc)
Rds On (Max) @ Id, Vgs 6.7 mOhm @ 25A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Weight -
Country of Origin -

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