PSMN5R0-100ES,127 - Nexperia USA Inc.

Part Number	PSMN5R0-100ES,127
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	170nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	9900pF @ 50V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	338W (Tc)
Rds On (Max) @ Id, Vgs	5 mOhm @ 25A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I2PAK
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
PSMN5R0-100ES,127	Nexperia USA Inc.	MOSFET N-CH 100V 120A I2PAK	Details
PSMN5R0-100PS,127	Nexperia USA Inc.	MOSFET N-CH 100V 120A TO220AB	Details
PSMN5R0-100XS,127	NXP USA Inc.	MOSFET N-CH 100V 67.5A TO-220F	Details
PSMN5R0-30YL,115	Nexperia USA Inc.	MOSFET N-CH 30V 91A LFPAK	Details
PSMN5R0-80BS,118	Nexperia USA Inc.	MOSFET N-CH 80V 100A D2PAK	Details
PSMN5R0-80PS	NXP	PSMN5R0-80PS NXP TO-220 New Original Stocks	Details
PSMN5R0-80PS,127	Nexperia USA Inc.	MOSFET N-CH 80V 100A TO220AB	Details
PSMN5R2-60YLX	Nexperia USA Inc.	MOSFET N-CH 60V LFPAK56	Details
PSMN5R3-25MLDX	Nexperia USA Inc.	PSMN5R3-25MLD/MLFPAK/REEL 7 Q	Details
PSMN5R4-25YLDX	Nexperia USA Inc.	PSMN5R4-25YLD/LFPAK/REEL 7 Q1	Details