PMV30UN2VL - Nexperia USA Inc.

Part Number	PMV30UN2VL
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	32 mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	11nC @ 4.5V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	655pF @ 10V
FET Feature	-
Power Dissipation (Max)	490mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-236AB
Package / Case	TO-236-3, SC-59, SOT-23-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
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PMV30UN2R	Nexperia USA Inc.	MOSFET N-CH 20V SOT23	Details
PMV30UN2VL	Nexperia USA Inc.	MOSFET N-CH 20V 5.4A TO236AB	Details
PMV30XN,215	NXP USA Inc.	MOSFET N-CH 20V 3.2A SOT-23	Details
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PMV31XN.215	PHI	PMV31XN.215 PHI SOT-23 New Original Stocks	Details
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