PMT200EPEX - Nexperia USA Inc.

Part Number	PMT200EPEX
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	70V
Current - Continuous Drain (Id) @ 25°C	2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	167 mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15.9nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	822pF @ 35V
FET Feature	-
Power Dissipation (Max)	800mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-73
Package / Case	TO-261-4, TO-261AA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
PMT200EN,115	NXP USA Inc.	MOSFET N-CH 100V 1.8A SC-73	Details
PMT200EN,135	NXP USA Inc.	MOSFET N-CH 100V 1.8A SC-73	Details
PMT200EPEAX	Nexperia USA Inc.	MOSFET P-CHANNEL 70V 2.4A SC73	Details
PMT200EPEX	Nexperia USA Inc.	PMT200EPE/SOT223/SC-73	Details
PMT20G	Carlo Gavazzi Inc.	SENSOR THROUGH-BEAM 20M	Details
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PMT20RG	Carlo Gavazzi Inc.	SENSOR THROUGH-BEAM 20M	Details
PMT20RGT	Carlo Gavazzi Inc.	SENSOR THROUGH-BEAM 20M	Details
PMT20RI	Carlo Gavazzi Inc.	SENSOR THROUGH-BEAM 20M RELAY	Details