NX3008NBKW,115 - Nexperia USA Inc.

Part Number	NX3008NBKW,115
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	350mA (Ta)
Drive Voltage (Max Rds On,Min Rds On)	1.8V, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	0.68nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 15V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	260mW (Ta), 830mW (Tc)
Rds On (Max) @ Id, Vgs	1.4 Ohm @ 350mA, 4.5V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-323-3
Package / Case	SC-70, SOT-323
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
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NX3008NBKMB,315	Nexperia USA Inc.	MOSFET N-CH 30V 530MA 3DFN	Details
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NX3008NBKT,115	NXP USA Inc.	MOSFET N-CH 30V SC-75	Details
NX3008NBKV,115	Nexperia USA Inc.	MOSFET 2N-CH 30V 0.4A SOT666	Details
NX3008NBKVL	Nexperia USA Inc.	NX3008NBK/SOT23/TO-236AB	Details
NX3008NBKW,115	Nexperia USA Inc.	MOSFET N-CH 30V SOT323	Details