APTGT50DH60T1G - Microsemi Corporation

Part Number	APTGT50DH60T1G
Part Status	Active
IGBT Type	Trench Field Stop
Configuration	Asymmetrical Bridge
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	80A
Power - Max	176W
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 50A
Current - Collector Cutoff (Max)	250µA
Input Capacitance (Cies) @ Vce	3.15nF @ 25V
Input	Standard
NTC Thermistor	Yes
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Chassis Mount
Package / Case	SP1
Supplier Device Package	SP1
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
APTGT100A1202G	Microsemi Corporation	MOD IGBT 1200V 140A SP2	Details
APTGT100A120D1G	Microsemi Corporation	IGBT MODULE TRENCH PHASE LEG D1	Details
APTGT100A120T3AG	Microsemi Corporation	MOD IGBT 1200V 140A SP3	Details
APTGT100A120TG	Microsemi Corporation	IGBT MODULE TRENCH PH LEG SP4	Details
APTGT100A170D1G	Microsemi Corporation	IGBT MODULE TRENCH PHASE LEG D1	Details
APTGT100A170TG	Microsemi Corporation	POWER MOD IGBT TRENCH PH LEG SP4	Details
APTGT100A602G	Microsemi Corporation	MOD IGBT 600V 150A SP2	Details
APTGT100A60T1G	Microsemi Corporation	IGBT PHASE LEG 600V 150A SP1	Details
APTGT100A60TG	Microsemi Corporation	IGBT MODULE TRENCH PH LEG SP4	Details
APTGT100BB60T3G	Microsemi Corporation	POWER MOD IGBT3 BOOST BUCK SP3	Details