APT75GT120JU2 - Microsemi Corporation

Part Number	APT75GT120JU2
Part Status	Active
IGBT Type	Trench Field Stop
Configuration	Single
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	100A
Power - Max	416W
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 75A
Current - Collector Cutoff (Max)	5mA
Input Capacitance (Cies) @ Vce	5.34nF @ 25V
Input	Standard
NTC Thermistor	No
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	ISOTOP
Supplier Device Package	SOT-227
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
APT75DF170HJ	Microsemi Corporation	MOD DIODE 1700V SOT-227	Details
APT75DL120HJ	Microsemi Corporation	MOD DIODE 1200V SOT-227	Details
APT75DL60HJ	Microsemi Corporation	MOD DIODE 600V SOT-227	Details
APT75DQ100BG	Microsemi Corporation	DIODE GEN PURP 1KV 75A TO247	Details
APT75DQ120BG	Microsemi Corporation	DIODE GEN PURP 1.2KV 75A TO247	Details
APT75DQ60BG	Microsemi Corporation	DIODE GEN PURP 600V 75A TO247	Details
APT75F50B2	Microsemi Corporation	MOSFET N-CH 500V 75A TO-247	Details
APT75F50L	Microsemi Corporation	MOSFET N-CH 500V 75A TO-264	Details
APT75GN120B2G	Microsemi Corporation	IGBT 1200V 200A 833W TMAX	Details
APT75GN120J	Microsemi Corporation	IGBT 1200V 124A 379W SOT227	Details