APT6010B2LLG - Microsemi Corporation

Part Number	APT6010B2LLG
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	54A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	6710pF @ 25V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	690W (Tc)
Rds On (Max) @ Id, Vgs	100 mOhm @ 27A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	T-MAX™ [B2]
Package / Case	TO-247-3 Variant
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
APT6010B2LLG	Microsemi Corporation	MOSFET N-CH 600V 54A T-MAX	Details
APT6010LFLL	APT	APT6010LFLL APT TO-264 New Original Stocks	Details
APT6013JLL	Microsemi Corporation	MOSFET N-CH 600V 39A SOT-227	Details
APT6013LLLG	Microsemi Corporation	MOSFET N-CH 600V 43A TO-264	Details
APT6017B2LLG	Microsemi Corporation	MOSFET N-CH 600V 35A T-MAX	Details
APT6017LFLLG	Microsemi Corporation	MOSFET N-CH 600V 35A TO-264	Details
APT6017LLLG	Microsemi Corporation	MOSFET N-CH 600V 35A TO-264	Details
APT6017WVR	APT	APT6017WVR APT TO3P New Original Stocks	Details
APT6030BN	Microsemi Corporation	MOSFET N-CH 600V 23A TO247AD	Details
APT6030BVFR	APT	APT6030BVFR APT TO-3P New Original Stocks	Details