APT5010B2FLLG - Microsemi Corporation

Part Number	APT5010B2FLLG
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	46A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs	95nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	4360pF @ 25V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	520W (Tc)
Rds On (Max) @ Id, Vgs	100 mOhm @ 23A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	T-MAX™ [B2]
Package / Case	TO-247-3 Variant
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
APT5010B2FLLG	Microsemi Corporation	MOSFET N-CH 500V 46A T-MAX	Details
APT5010B2LLG	Microsemi Corporation	MOSFET N-CH 500V 46A T-MAX	Details
APT5010JFLL	APT	APT5010JFLL APT SMD or Through Hole New Original Stocks	Details
APT5010JLLU2	Microsemi Corporation	MOSFET N-CH 500V 41A SOT-227	Details
APT5010JLLU3	Microsemi Corporation	MOSFET N-CH 500V 41A SOT227	Details
APT5010JN	APT	APT5010JN APT SMD or Through Hole New Original Stocks	Details
APT5010JVR	APT	APT5010JVR APT SMD or Through Hole New Original Stocks	Details
APT5010JVRU2	Microsemi Corporation	MOSFET N-CH 500V 44A SOT227	Details
APT5010JVRU3	Microsemi Corporation	MOSFET N-CH 500V 44A SOT227	Details
APT5010LFLLG	Microsemi Corporation	MOSFET N-CH 500V 46A TO-264	Details