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Home › Product Categories › Discrete Semiconductor › Transistors - IGBTs - Single › APT33GF120B2RDQ2G
APT33GF120B2RDQ2G

APT33GF120B2RDQ2G - Microsemi Corporation

Part Number
APT33GF120B2RDQ2G
Manufacturer
Microsemi Corporation
Brief Description
IGBT 1200V 64A 357W TMAX
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
APT33GF120B2RDQ2G PDF online browsing
Datasheet PDF Download
-
Category
Transistors - IGBTs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
25 pcs
Reference Price
USD 19.3/pcs
Our Price
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APT33GF120B2RDQ2G Detailed Description

Part Number APT33GF120B2RDQ2G
Part Status Active
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 64A
Current - Collector Pulsed (Icm) 75A
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 25A
Power - Max 357W
Switching Energy 1.315µJ (on), 1.515µJ (off)
Input Type Standard
Gate Charge 170nC
Td (on/off) @ 25°C 14ns/185ns
Test Condition 800V, 25A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Supplier Device Package -
Weight -
Country of Origin -

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