| Part Number | 1N5614 |
|---|---|
| Part Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.3V @ 3A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2µs |
| Current - Reverse Leakage @ Vr | 500nA @ 200V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | A, Axial |
| Supplier Device Package | - |
| Operating Temperature - Junction | -65°C ~ 200°C |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
1N-SS119 | SEMTECH_ELEC | SILICON EPITAXIAL PLANAR DIODE | Details |
|
1N-SS254 | SEMTECH | Packing Specification of 52mm Ammo Pack | Details |
|
1N102 | EXSHINE | GOLD BONDED DIODES | Details |
|
1N103 | EXSHINE | GOLD BONDED DIODES | Details |
|
1N104 | EXSHINE | GOLD BONDED DIODES | Details |
|
1N107 | EXSHINE | GOLD BONDED DIODES | Details |
|
1N108 | EXSHINE | GOLD BONDED DIODES | Details |
|
1N1081 | EXSHINE | 1N1081 | Details |
|
1N1081A | EXSHINE | 1N1081 | Details |
|
1N1082 | EXSHINE | 1N1081 | Details |
