| Part Number | MT29E2T08CUHBBM4-3:B |
|---|---|
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 2Tb (256G x 8) |
| Clock Frequency | 333MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | - |
| Memory Interface | Parallel |
| Voltage - Supply | 2.5V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
MT29E2T08CTCBBJ7-6:B TR | Micron Technology Inc. | IC FLASH 2TBIT 167MHZ 152LBGA | Details |
|
MT29E2T08CTCCBJ7-6:C | Micron Technology Inc. | IC FLASH 2T PARALLEL 167MHZ | Details |
|
MT29E2T08CTCCBJ7-6:C TR | Micron Technology Inc. | IC FLASH 2TBIT 167MHZ 152LBGA | Details |
|
MT29E2T08CUHBBM4-3:B | Micron Technology Inc. | IC FLASH 2T PARALLEL 333MHZ | Details |
|
MT29E2T08CUHBBM4-3:B TR | Micron Technology Inc. | IC FLASH 2TBIT 333MHZ 132LBGA | Details |
|
MT29E2T08CUHBBM4-3ES:B TR | Micron Technology Inc. | IC FLASH 2TBIT 333MHZ 132LBGA | Details |
