IXTX32P60P - IXYS

Part Number	IXTX32P60P
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	32A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	196nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	11100pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	890W (Tc)
Rds On (Max) @ Id, Vgs	350 mOhm @ 16A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PLUS247™-3
Package / Case	TO-247-3
Weight	-
Country of Origin	-

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