IXTN210P10T

IXTN210P10T - IXYS

Part Number
IXTN210P10T
Manufacturer
IXYS
Brief Description
MOSFET P-CH 100V 210A SOT-227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IXTN210P10T PDF online browsing
Datasheet PDF Download
IXTN210P10T.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
668 pcs
Reference Price
USD 37.9935/pcs
Our Price
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IXTN210P10T Detailed Description

Part Number IXTN210P10T
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 210A
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 740nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 69500pF @ 25V
Vgs (Max) ±15V
FET Feature -
Power Dissipation (Max) 830W (Tc)
Rds On (Max) @ Id, Vgs 7.5 mOhm @ 105A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B
Package / Case SOT-227-4, miniBLOC
Weight -
Country of Origin -

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