IXTN170P10P Detailed Description
Part Number |
IXTN170P10P |
Part Status |
Active |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
100V |
Current - Continuous Drain (Id) @ 25°C |
170A |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs(th) (Max) @ Id |
4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
240nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
12600pF @ 25V |
Vgs (Max) |
±20V |
FET Feature |
- |
Power Dissipation (Max) |
890W (Tc) |
Rds On (Max) @ Id, Vgs |
12 mOhm @ 500mA, 10V |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Chassis Mount |
Supplier Device Package |
SOT-227B |
Package / Case |
SOT-227-4, miniBLOC |
Weight |
- |
Country of Origin |
- |
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