IXTH1N200P3HV

IXTH1N200P3HV - IXYS

Part Number
IXTH1N200P3HV
Manufacturer
IXYS
Brief Description
MOSFET N-CH 2000V 1A TO-247HV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IXTH1N200P3HV PDF online browsing
Datasheet PDF Download
IXTH1N200P3HV.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
30 pcs
Reference Price
USD 23.72/pcs
Our Price
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IXTH1N200P3HV Detailed Description

Part Number IXTH1N200P3HV
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 2000V
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 646pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Rds On (Max) @ Id, Vgs 40 Ohm @ 500mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247HV
Package / Case TO-247-3 Variant
Weight -
Country of Origin -

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