IXFY4N60P3 - IXYS

Part Number	IXFY4N60P3
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	365pF @ 25V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	114W (Tc)
Rds On (Max) @ Id, Vgs	2.2 Ohm @ 2A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IXFY26N30X3	IXYS	300V/26A ULTRA JUNCTION X3-CLASS	Details
IXFY30N25X3	IXYS	MOSFET N-CH 250V 30A TO252AA	Details
IXFY36N20X3	IXYS	200V/36A ULTRA JUNCTION X3-CLASS	Details
IXFY4N60P3	IXYS	MOSFET N-CH 600V 4A TO-252	Details
IXFY4N85X	IXYS	MOSFET N-CH 850V 3.5A TO252-3	Details
IXFY5N50P3	IXYS	MOSFET N-CH 500V 5A TO-252	Details
IXFY8N65X2	IXYS	MOSFET N-CH	Details