SPA16N50C3XKSA1 - Infineon Technologies

Part Number	SPA16N50C3XKSA1
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	560V
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	280 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3.9V @ 675µA
Gate Charge (Qg) (Max) @ Vgs	66nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 25V
FET Feature	-
Power Dissipation (Max)	34W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package / Case	TO-220-3 Full Pack
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	SPA16N50C3	Infineon Technologies	MOSFET N-CH 560V 16A TO220FP	Details
	SPA16N50C3XKSA1	Infineon Technologies	MOSFET N-CH 560V 16A TO220FP	Details