IRLU014NPBF - Infineon Technologies

Part Number	IRLU014NPBF
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7.9nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	265pF @ 25V
Vgs (Max)	±16V
FET Feature	-
Power Dissipation (Max)	28W (Tc)
Rds On (Max) @ Id, Vgs	140 mOhm @ 6A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I-Pak
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IRLU014	Vishay Siliconix	MOSFET N-CH 60V 7.7A I-PAK	Details
IRLU014N	Infineon Technologies	MOSFET N-CH 55V 10A I-PAK	Details
IRLU014NPBF	Infineon Technologies	MOSFET N-CH 55V 10A I-PAK	Details
IRLU014PBF	Vishay Siliconix	MOSFET N-CH 60V 7.7A I-PAK	Details
IRLU024	Vishay Siliconix	MOSFET N-CH 60V 14A I-PAK	Details
IRLU024N	Infineon Technologies	MOSFET N-CH 55V 17A I-PAK	Details
IRLU024NPBF	Infineon Technologies	MOSFET N-CH 55V 17A I-PAK	Details
IRLU024PBF	Vishay Siliconix	MOSFET N-CH 60V 14A I-PAK	Details
IRLU024ZPBF	Infineon Technologies	MOSFET N-CH 55V 16A I-PAK	Details
IRLU110	Vishay Siliconix	MOSFET N-CH 100V 4.3A I-PAK	Details