IRFSL23N20D102P

IRFSL23N20D102P - Infineon Technologies

Part Number
IRFSL23N20D102P
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 200V 24A TO-262
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IRFSL23N20D102P PDF online browsing
Datasheet PDF Download
IRFSL23N20D102P.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
4253 pcs
Reference Price
USD 0/pcs
Our Price
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IRFSL23N20D102P Detailed Description

Part Number IRFSL23N20D102P
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1960pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs 100 mOhm @ 14A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Weight -
Country of Origin -

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