IPC50N04S55R8ATMA1 Detailed Description
| Part Number |
IPC50N04S55R8ATMA1 |
| Part Status |
Active |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
40V |
| Current - Continuous Drain (Id) @ 25°C |
50A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) |
7V, 10V |
| Vgs(th) (Max) @ Id |
3.4V @ 13µA |
| Gate Charge (Qg) (Max) @ Vgs |
18nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
1090pF @ 25V |
| Vgs (Max) |
±20V |
| FET Feature |
- |
| Power Dissipation (Max) |
42W (Tc) |
| Rds On (Max) @ Id, Vgs |
5.8 mOhm @ 25A, 10V |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
PG-TDSON-8 |
| Package / Case |
8-PowerTDFN |
| Weight |
- |
| Country of Origin |
- |
RELATED PRODUCTS FOR IPC50N04S55R8ATMA1
