| Part Number | IPC100N04S51R2ATMA1 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 7V, 10V |
| Vgs(th) (Max) @ Id | 3.4V @ 90µA |
| Gate Charge (Qg) (Max) @ Vgs | 131nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 7650pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2 mOhm @ 50A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TDSON-8 |
| Package / Case | 8-PowerTDFN |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
IPC100N04S402ATMA1 | Infineon Technologies | MOSFET N-CH 8TDSON | Details |
|
IPC100N04S51R2ATMA1 | Infineon Technologies | MOSFET N-CH 40V 100A 8TDFN | Details |
|
IPC100N04S51R7ATMA1 | Infineon Technologies | MOSFET N-CH 40V 100A 8TDFN | Details |
|
IPC100N04S51R9ATMA1 | Infineon Technologies | N-CHANNEL_30/40V | Details |
|
IPC100N04S52R8ATMA1 | Infineon Technologies | MOSFET N-CH 40V 100A 8TDSON | Details |
|
IPC100N04S5L1R1ATMA1 | Infineon Technologies | N-CHANNEL_30/40V | Details |
|
IPC100N04S5L1R5ATMA1 | Infineon Technologies | MOSFET N-CH 40V 100A 8TDFN | Details |
|
IPC100N04S5L1R9ATMA1 | Infineon Technologies | MOSFET N-CH 40V 100A 8TDFN | Details |
|
IPC100N04S5L2R6ATMA1 | Infineon Technologies | MOSFET N-CH 40V 100A 8TDSON | Details |
