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Home › Product Categories › Discrete Semiconductor › Transistors - FETs, MOSFETs - Single › IPB60R040C7ATMA1
IPB60R040C7ATMA1

IPB60R040C7ATMA1 - Infineon Technologies

Part Number
IPB60R040C7ATMA1
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 600V TO263-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IPB60R040C7ATMA1 PDF online browsing
Datasheet PDF Download
IPB60R040C7ATMA1.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
3648 pcs
Reference Price
USD 7.3754/pcs
Our Price
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IPB60R040C7ATMA1 Detailed Description

Part Number IPB60R040C7ATMA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 1.24mA
Gate Charge (Qg) (Max) @ Vgs 107nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 4340pF @ 400V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 227W (Tc)
Rds On (Max) @ Id, Vgs 40 mOhm @ 24.9A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Weight -
Country of Origin -

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