IPB038N12N3GATMA1 - Infineon Technologies

Part Number	IPB038N12N3GATMA1
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	120V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.8 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs	211nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	13800pF @ 60V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263AB)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	IPB038N12N3 G	Infineon Technologies	MOSFET N-CH 120V 120A TO263-3	Details
	IPB038N12N3GATMA1	Infineon Technologies	MOSFET N-CH 120V 120A TO263-3	Details