| Part Number | IPB011N04L G |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs | 346nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 29000pF @ 20V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1 mOhm @ 100A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-7-3 |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
IPB009N03L G | Infineon Technologies | MOSFET N-CH 30V 180A TO263-7 | Details |
|
IPB009N03LGATMA1 | Infineon Technologies | MOSFET N-CH 30V 180A TO263-7 | Details |
|
IPB010N06NATMA1 | Infineon Technologies | MOSFET N-CH 60V 45A TO263-7 | Details |
|
IPB011N04L G | Infineon Technologies | MOSFET N-CH 40V 180A TO263-7 | Details |
|
IPB011N04LGATMA1 | Infineon Technologies | MOSFET N-CH 40V 180A TO263-7 | Details |
|
IPB011N04NGATMA1 | Infineon Technologies | MOSFET N-CH 40V 180A TO263-7 | Details |
|
IPB014N06NATMA1 | Infineon Technologies | MOSFET N-CH 60V 34A TO263-7 | Details |
 |
IPB015N04L G | Infineon Technologies | MOSFET N-CH 40V 120A TO263-3 | Details |
|
IPB015N04LGATMA1 | Infineon Technologies | MOSFET N-CH 40V 120A TO263-3 | Details |
|
IPB015N04N G | Infineon Technologies | MOSFET N-CH 40V 120A TO263-3 | Details |
