• English
      Language Translation
    • English
    • Deutschl
    • Italia
    • France
    • España
    • 대한민국
    • 日本语
    • русский
Home › Product Categories › Discrete Semiconductor › Transistors - IGBTs - Single › IKD10N60RAATMA2
IKD10N60RAATMA2

IKD10N60RAATMA2 - Infineon Technologies

Part Number
IKD10N60RAATMA2
Manufacturer
Infineon Technologies
Brief Description
IGBT 600V 20A 150W TO252-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IKD10N60RAATMA2 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - IGBTs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
30621 pcs
Reference Price
USD 0.8596/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for IKD10N60RAATMA2

IKD10N60RAATMA2 Detailed Description

Part Number IKD10N60RAATMA2
Part Status Active
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 20A
Current - Collector Pulsed (Icm) 30A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 10A
Power - Max 150W
Switching Energy -
Input Type Standard
Gate Charge 64nC
Td (on/off) @ 25°C 14ns/192ns
Test Condition 400V, 10A, 23 Ohm, 15V
Reverse Recovery Time (trr) 62ns
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PG-TO252-3
Weight -
Country of Origin -

RELATED PRODUCTS FOR IKD10N60RAATMA2

Image Part Number Manufacturers Description View
IKD10N60R IKD10N60R Infineon Technologies IGBT 600V 20A 150W TO252-3 Details
IKD10N60RAATMA2 IKD10N60RAATMA2 Infineon Technologies IGBT 600V 20A 150W TO252-3 Details
IKD10N60RATMA1 IKD10N60RATMA1 Infineon Technologies IGBT 600V 20A 150W TO252 Details
IKD10N60RFAATMA1 IKD10N60RFAATMA1 Infineon Technologies IGBT 600V 20A 150W PG-TO252-3 Details
IKD10N60RFATMA1 IKD10N60RFATMA1 Infineon Technologies IGBT 600V 20A 150W PG-TO252-3 Details