FF200R12KE3B2HOSA1

FF200R12KE3B2HOSA1 - Infineon Technologies

Part Number
FF200R12KE3B2HOSA1
Manufacturer
Infineon Technologies
Brief Description
MOD IGBT MED PWR 62MM-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
FF200R12KE3B2HOSA1 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - IGBTs - Modules
Delivery Time
1 Day
Date Code
New
Stock Quantity
1422 pcs
Reference Price
USD 115.745/pcs
Our Price
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FF200R12KE3B2HOSA1 Detailed Description

Part Number FF200R12KE3B2HOSA1
Part Status Active
IGBT Type -
Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 295A
Power - Max 1050W
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 200A
Current - Collector Cutoff (Max) 5mA
Input Capacitance (Cies) @ Vce 14nF @ 25V
Input Standard
NTC Thermistor No
Operating Temperature -40°C ~ 125°C
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module
Weight -
Country of Origin -

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