FF200R12KE3B2HOSA1 - Infineon Technologies

Part Number	FF200R12KE3B2HOSA1
Part Status	Active
IGBT Type	-
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	295A
Power - Max	1050W
Vce(on) (Max) @ Vge, Ic	2.15V @ 15V, 200A
Current - Collector Cutoff (Max)	5mA
Input Capacitance (Cies) @ Vce	14nF @ 25V
Input	Standard
NTC Thermistor	No
Operating Temperature	-40°C ~ 125°C
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
FF200R06KE3HOSA1	Infineon Technologies	IGBT MODULE 600V 200A	Details
FF200R12KE3	INFINEON	FF200R12KE3 INFINEON SMD or Through Hole New Original Stocks	Details
FF200R12KE3B2HOSA1	Infineon Technologies	MOD IGBT MED PWR 62MM-1	Details
FF200R12KE3HOSA1	Infineon Technologies	IGBT MODULE VCES 1200V 200A	Details
FF200R12KE4HOSA1	Infineon Technologies	IGBT MODULE 1200V 200A	Details
FF200R12KE4PHOSA1	Infineon Technologies	MOD IGBT MED PWR 62MM-1	Details
FF200R12KS4	INFINEON	FF200R12KS4 INFINEON SMD or Through Hole New Original Stocks	Details
FF200R12KS4HOSA1	Infineon Technologies	IGBT MODULE VCES 1200V 200A	Details
FF200R12KS4PHOSA1	Infineon Technologies	MOD IGBT MED PWR 62MM-1	Details
FF200R12KT3	INFINEON	FF200R12KT3 INFINEON SMD or Through Hole New Original Stocks	Details