BSZ16DN25NS3 G

BSZ16DN25NS3 G - Infineon Technologies

Part Number
BSZ16DN25NS3 G
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 250V 10.9A 8TSDSON
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
BSZ16DN25NS3 G PDF online browsing
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Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
12500 pcs
Reference Price
USD 0.7419/pcs
Our Price
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BSZ16DN25NS3 G Detailed Description

Part Number BSZ16DN25NS3 G
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 10.9A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 32µA
Gate Charge (Qg) (Max) @ Vgs 11.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 920pF @ 100V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 62.5W (Tc)
Rds On (Max) @ Id, Vgs 165 mOhm @ 5.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8
Package / Case 8-PowerTDFN
Weight -
Country of Origin -

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