BSZ120P03NS3EGATMA1

BSZ120P03NS3EGATMA1 - Infineon Technologies

Part Number
BSZ120P03NS3EGATMA1
Manufacturer
Infineon Technologies
Brief Description
MOSFET P-CH 30V 40A TSDSON-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
BSZ120P03NS3EGATMA1 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
105059 pcs
Reference Price
USD 0.2584/pcs
Our Price
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BSZ120P03NS3EGATMA1 Detailed Description

Part Number BSZ120P03NS3EGATMA1
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 40A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 6V, 10V
Vgs(th) (Max) @ Id 3.1V @ 73µA
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3360pF @ 15V
Vgs (Max) ±25V
FET Feature -
Power Dissipation (Max) 2.1W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs 12 mOhm @ 20A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8
Package / Case 8-PowerTDFN
Weight -
Country of Origin -

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