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Home › Product Categories › Discrete Semiconductor › Transistors - FETs, MOSFETs - Single › BSC0904NSIATMA1
BSC0904NSIATMA1

BSC0904NSIATMA1 - Infineon Technologies

Part Number
BSC0904NSIATMA1
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 30V 20A 8TDSON
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
BSC0904NSIATMA1 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
521770 pcs
Reference Price
USD 0.31556/pcs
Our Price
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BSC0904NSIATMA1 Detailed Description

Part Number BSC0904NSIATMA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 20A (Ta), 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.7 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 15V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 37W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8
Package / Case 8-PowerTDFN
Weight -
Country of Origin -

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