| Part Number | BSC0904NSIATMA1 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 78A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 3.7 mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 37W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TDSON-8 |
| Package / Case | 8-PowerTDFN |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
BSC0901NS | Infineon Technologies | MOSFET N-CH 30V 100A 8TDSON | Details |
|
BSC0901NSATMA1 | Infineon Technologies | MOSFET N-CH 30V 100A 8TDSON | Details |
|
BSC0901NSI | Infineon Technologies | MOSFET N-CH 30V 28A 8TDSON | Details |
|
BSC0901NSIATMA1 | Infineon Technologies | MOSFET N-CH 30V 28A 8TDSON | Details |
|
BSC0902NS | Infineon Technologies | MOSFET N-CH 30V 100A 8TDSON | Details |
|
BSC0902NSATMA1 | Infineon Technologies | MOSFET N-CH 30V 100A 8TDSON | Details |
|
BSC0902NSI | Infineon Technologies | MOSFET N-CH 30V 100A 8TDSON | Details |
|
BSC0902NSIATMA1 | Infineon Technologies | MOSFET N-CH 30V 100A 8TDSON | Details |
|
BSC0904NSI | Infineon Technologies | MOSFET N-CH 30V 20A 8TDSON | Details |
|
BSC0904NSIATMA1 | Infineon Technologies | MOSFET N-CH 30V 20A 8TDSON | Details |
