BFR93AE6327HTSA1 - Infineon Technologies

Part Number	BFR93AE6327HTSA1
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	6GHz
Noise Figure (dB Typ @ f)	1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Gain	9.5dB ~ 14.5dB
Power - Max	300mW
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 30mA, 8V
Current - Collector (Ic) (Max)	90mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
BFR93A	PHI	BFR93A PHI SOT23 New Original Stocks	Details
BFR93A,215	NXP USA Inc.	TRANS NPN 35MA 12V 6GHZ SOT23	Details
BFR93A,235	NXP USA Inc.	TRANS NPN 12V 35MA 6GHZ SOT23	Details
BFR93A-T1	EXSHINE	The RF Line NPN Silicon High-Frequency Transistor	Details
BFR93A-T3	EXSHINE	The RF Line NPN Silicon High-Frequency Transistor	Details
BFR93AE6327HTSA1	Infineon Technologies	RF TRANS NPN 12V 6GHZ SOT23-3	Details
BFR93AF	VISHAY	Silicon NPN Planar RF Transistor	Details
BFR93AR	VISHAY	Silicon NPN Planar RF Transistor	Details
BFR93AR,215	NXP USA Inc.	TRANS NPN 35MA 12V 6GHZ SOT23	Details
BFR93AR-T1	EXSHINE	The RF Line NPN Silicon High-Frequency Transistor	Details