| Part Number | MSRTA60060(A) |
|---|---|
| Part Status | Active |
| Diode Configuration | 1 Pair Common Cathode |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) (per Diode) | 600A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.2V @ 600A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 25µA @ 600V |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Mounting Type | Chassis Mount |
| Package / Case | Three Tower |
| Supplier Device Package | Three Tower |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
MSRTA200100(A)D | GeneSiC Semiconductor | DIODE GEN 1KV 200A 3 TOWER | Details |
|
MSRTA200120(A)D | GeneSiC Semiconductor | DIODE GEN 1.2KV 200A 3 TOWER | Details |
|
MSRTA200140(A)D | GeneSiC Semiconductor | DIODE GEN 1.4KV 200A 3 TOWER | Details |
|
MSRTA200160(A)D | GeneSiC Semiconductor | DIODE GEN 1.6KV 200A 3 TOWER | Details |
|
MSRTA20060(A)D | GeneSiC Semiconductor | DIODE GEN PURP 600V 200A 3 TOWER | Details |
|
MSRTA20080(A)D | GeneSiC Semiconductor | DIODE GEN PURP 800V 200A 3 TOWER | Details |
|
MSRTA300100(A)D | GeneSiC Semiconductor | DIODE MODULE 1KV 300A 3TOWER | Details |
|
MSRTA300120(A)D | GeneSiC Semiconductor | DIODE MODULE 1.2KV 300A 3TOWER | Details |
|
MSRTA300140(A)D | GeneSiC Semiconductor | DIODE MODULE 1.4KV 300A 3TOWER | Details |
|
MSRTA300160(A)D | GeneSiC Semiconductor | DIODE MODULE 1.6KV 300A 3TOWER | Details |
