MSRTA300120(A)D - GeneSiC Semiconductor

Part Number	MSRTA300120(A)D
Part Status	Active
Diode Configuration	1 Pair Series Connection
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	1200V
Current - Average Rectified (Io) (per Diode)	300A (DC)
Voltage - Forward (Vf) (Max) @ If	1.2V @ 300A
Speed	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)	-
Current - Reverse Leakage @ Vr	25µA @ 200V
Operating Temperature - Junction	-55°C ~ 150°C
Mounting Type	Chassis Mount
Package / Case	Three Tower
Supplier Device Package	Three Tower
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
MSRTA200100(A)D	GeneSiC Semiconductor	DIODE GEN 1KV 200A 3 TOWER	Details
MSRTA200120(A)D	GeneSiC Semiconductor	DIODE GEN 1.2KV 200A 3 TOWER	Details
MSRTA200140(A)D	GeneSiC Semiconductor	DIODE GEN 1.4KV 200A 3 TOWER	Details
MSRTA200160(A)D	GeneSiC Semiconductor	DIODE GEN 1.6KV 200A 3 TOWER	Details
MSRTA20060(A)D	GeneSiC Semiconductor	DIODE GEN PURP 600V 200A 3 TOWER	Details
MSRTA20080(A)D	GeneSiC Semiconductor	DIODE GEN PURP 800V 200A 3 TOWER	Details
MSRTA300100(A)D	GeneSiC Semiconductor	DIODE MODULE 1KV 300A 3TOWER	Details
MSRTA300120(A)D	GeneSiC Semiconductor	DIODE MODULE 1.2KV 300A 3TOWER	Details
MSRTA300140(A)D	GeneSiC Semiconductor	DIODE MODULE 1.4KV 300A 3TOWER	Details
MSRTA300160(A)D	GeneSiC Semiconductor	DIODE MODULE 1.6KV 300A 3TOWER	Details