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Home › Product Categories › Discrete Semiconductor › Transistors - FETs, MOSFETs - Single › GA04JT17-247
GA04JT17-247

GA04JT17-247 - GeneSiC Semiconductor

Part Number
GA04JT17-247
Manufacturer
GeneSiC Semiconductor
Brief Description
TRANS SJT 1700V 4A TO-247AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
GA04JT17-247 PDF online browsing
Datasheet PDF Download
GA04JT17-247.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
65 pcs
Reference Price
USD 31.92/pcs
Our Price
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GA04JT17-247 Detailed Description

Part Number GA04JT17-247
Part Status Active
FET Type -
Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 1700V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) (95°C)
Drive Voltage (Max Rds On,Min Rds On) -
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds -
Vgs (Max) -
FET Feature -
Power Dissipation (Max) 106W (Tc)
Rds On (Max) @ Id, Vgs 480 mOhm @ 4A
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AB
Package / Case TO-247-3
Weight -
Country of Origin -

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