MB85R256GPF-G-BND-ERE1

MB85R256GPF-G-BND-ERE1 - Fujitsu Electronics America, Inc.

Part Number
MB85R256GPF-G-BND-ERE1
Manufacturer
Fujitsu Electronics America, Inc.
Brief Description
IC FRAM 256KBIT PAR 28SOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
MB85R256GPF-G-BND-ERE1 PDF online browsing
Datasheet PDF Download
-
Category
Memory
Delivery Time
1 Day
Date Code
New
Stock Quantity
3759 pcs
Reference Price
USD 0/pcs
Our Price
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MB85R256GPF-G-BND-ERE1 Detailed Description

Part Number MB85R256GPF-G-BND-ERE1
Part Status Obsolete
Memory Type Non-Volatile
Memory Format FRAM
Technology FRAM (Ferroelectric RAM)
Memory Size 256Kb (32K x 8)
Clock Frequency -
Write Cycle Time - Word, Page 150ns
Access Time 150ns
Memory Interface Parallel
Voltage - Supply 2.7 V ~ 3.6 V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type -
Package / Case -
Supplier Device Package -
Weight -
Country of Origin -

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