HGT1S10N120BNST

HGT1S10N120BNST - Fairchild/ON Semiconductor

Part Number
HGT1S10N120BNST
Manufacturer
Fairchild/ON Semiconductor
Brief Description
IGBT 1200V 35A 298W TO263AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
HGT1S10N120BNST PDF online browsing
Datasheet PDF Download
-
Category
Transistors - IGBTs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
11466 pcs
Reference Price
USD 2.3051/pcs
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HGT1S10N120BNST Detailed Description

Part Number HGT1S10N120BNST
Part Status Active
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 35A
Current - Collector Pulsed (Icm) 80A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Power - Max 298W
Switching Energy 320µJ (on), 800µJ (off)
Input Type Standard
Gate Charge 100nC
Td (on/off) @ 25°C 23ns/165ns
Test Condition 960V, 10A, 10 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AB
Weight -
Country of Origin -

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