FDP036N10A - Fairchild/ON Semiconductor

Part Number	FDP036N10A
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	116nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	7295pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	333W (Tc)
Rds On (Max) @ Id, Vgs	3.6 mOhm @ 75A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
FDP020N06B-F102	ON Semiconductor	MOSFET N-CH 60V 120A TO-220-3	Details
FDP020N06B_F102	Fairchild/ON Semiconductor	MOSFET N-CH 60V 120A TO-220-3	Details
FDP023N08B-F102	ON Semiconductor	MOSFET N-CH 75V 120A TO-220-3	Details
FDP023N08B_F102	Fairchild/ON Semiconductor	MOSFET N-CH 75V 120A TO-220-3	Details
FDP025N06	Fairchild/ON Semiconductor	MOSFET N-CH 60V 120A TO-220	Details
FDP027N08B	Fairchild/ON Semiconductor	MOSFET N-CH 80V 223A TO-220-3	Details
FDP027N08B-F102	ON Semiconductor	MOSFET N-CH 80V 120A TO-220-3	Details
FDP027N08B_F102	Fairchild/ON Semiconductor	MOSFET N-CH 80V 120A TO-220-3	Details
FDP030N06	Fairchild/ON Semiconductor	MOSFET N-CH 60V 120A TO220	Details
FDP030N06B-F102	ON Semiconductor	MOSFET N-CH 60V 120A TO-220-3	Details