FDD86113LZ - Fairchild/ON Semiconductor

Part Number	FDD86113LZ
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	4.2A (Ta), 5.5A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	285pF @ 50V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	3.1W (Ta), 29W (Tc)
Rds On (Max) @ Id, Vgs	104 mOhm @ 4.2A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D-PAK (TO-252AA)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Weight	-
Country of Origin	-

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